HY57V281620F SDRAM 内存芯片用户手册

HY57V281620F SDRAM

使用该芯片的有：

MYD-LPC1788 工控板/开发板

FEATURES

Voltage: VDD, VDDQ 3.3V supply voltage
• All device pins are compatible with LVTTL interface
• 54 Pin TSOPII (Lead Free Package)
• All inputs and outputs referenced to positive edge of
system clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 4096 Refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency; 2, 3 Clocks
• Burst Read Single Write operation
• Operating Temperature
- Commercial Temperature (0oC to 70oC)
- Industrial Temperature (-40oC to 85oC)